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FCA35N60 N-Channel MOSFET
March 2009
FCA35N60
600V N-Channel MOSFET
Features
* 650V @ TJ = 150C * Typ.RDS(on) = 0.079 * Ultra low gate charge ( Typ. Qg = 139nC ) * Low effective output capacitance ( Typ. Coss.eff = 340pF ) * 100% avalanche tested
SuperFETTM
Description
SuperFETTM is Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
G
TO-3PN
G DS S
o
MOSFET Maximum Ratings TC = 25 C unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate-Soure voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 600 30 35 22.2 105 1455 35 31.25 20 312.5 2.5 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case-to-Heat Sink Thermal Resistance, Junction to Ambient Typ. 0.24 Max. 0.4 42
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. A
1
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FCA35N60 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FCA35N60 Device FCA35N60 Package TO-3PN Reel Size Tape Width Quantity 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ BVDS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VGS = 0V, ID = 16A VDS = 480V, TC = 125oC VGS = 30V, VDS = 0V VDS = 600V, VGS = 0V 600 650 0.6 700 1 10 100 V V V/oC V A nA ID = 250A, VGS = 0V, TJ = 150oC
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 17.5A VDS = 40V, ID = 17.5A 3.0 0.079 28.8 5.0 0.098 V S
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 480V, ID = 35A VGS = 10V Drain Open, F= 1MHZ VDS = 25V, VGS = 0V f = 1MHz VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 480V, VGS = 0V (Note 4)
4990 2380 140 113 340 139 31 69 1.4
6640 3170 181 -
pF pF pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 35A RG = 4.7
(Note 4)
-
34 120 105 73
78 250 220 155
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 35A VGS = 0V, ISD = 35A dIF/dt = 100A/s 614 16.3 35 105 1.4 A A V ns C
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: IAS = 17.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 35A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Essentially Independent of Operating Temperature Typical Characteristics
FCA35N60 Rev. A
2
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FCA35N60 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200 100
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
200 100
ID, Drain Current[A]
ID, Drain Current[A]
10
10
150 C
o
-55 C 25 C
o
o
1 0.3 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 VDS, Drain-Source Voltage[V]
10
20
1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
4
5 6 7 8 VGS, Gate-Source Voltage[V]
9
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.24
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.20
100
0.16
0.12
VGS = 10V VGS = 20V
150 C
o
10
25 C
o
0.08
0.04
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
0
25
50 75 ID, Drain Current [A]
100
125
1 0.2
2. 250s Pulse Test
0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
50000
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
10000
Capacitances [pF]
Ciss
8
6
1000
*Note: 1. VGS = 0V 2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Coss
4
100
2
*Note: ID = 35A
10 0.1
Crss
0
1 10 100 VDS, Drain-Source Voltage [V]
600
0
40 80 120 Qg, Total Gate Charge [nC]
160
FCA35N60 Rev. A
3
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FCA35N60 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 17.5A
1.10 1.05 1.00 0.95 0.90 0.85 -100
*Notes: 1. VGS = 0V 2. ID = 250A
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
300 100
100s 10s
Figure 10. Maximum Drain Current vs. Case Temperature
40
ID, Drain Current [A]
1ms
10
DC
10ms
1
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1000
30
20
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
0.01
1
10 100 VDS, Drain-Source Voltage [V]
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
0.6
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
o
0.01
0.02 0.01 Single pulse
*Notes: 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.001 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FCA35N60 Rev. A
4
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FCA35N60 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA35N60 Rev. A
5
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FCA35N60 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCA35N60 Rev. A
6
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FCA35N60 N-Channel MOSFET
Mechanical Dimensions
TO-3PN
FCA35N60 Rev. A
7
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FCA35N60 N-Channel MOSFET
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Rev. I38
FCA35N60 Rev. A
8
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